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3SK318
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005
Features
* Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) * Excellent cross modulation characteristics * Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Note:
Marking is "YB-".
Rev.2.00 Aug 10, 2005 page 1 of 7
3SK318
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 6 6 20 100 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) IDS(op) |yfs| Ciss Coss Crss PG NF Min 6 6 6 -- -- 0.5 0.5 0.5 18 1.3 0.9 -- 18 -- Typ -- -- -- -- -- 0.7 0.7 4 24 1.6 1.2 0.019 21 1.4 Max -- -- -- 100 100 1.0 1.0 10 32 1.9 1.5 0.03 -- 2.2 Unit V V V nA nA V V mA mS pF pF pF dB dB Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = 10 A, VG2S = VDS = 0 IG2 = 10 A, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 3 V ID = 100A VDS = 5 V, VG1S = 3 V ID = 100 A VDS = 3.5 V, VG1S = 1.1 V VG2S = 3 V VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 1 kHz VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f= 1 MHz VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 900 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
3SK318
Maximum Channel Power Dissipation Curve
Channel Power Dissipation Pch (mW)
200 20
VG1S = 1.7 V
Typical Output Characteristics
VG2S = 3 V
16 150
1.6 V 1.5 V
Drain Current ID (mA)
12
1.4 V 1.3 V 1.2 V
100
8
50
4
1.1 V 1.0 V 0.9 V 0.8 V
0
50
100
150
200
0
2
4
6
8
10
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V) Drain Current vs. Gate2 to Source Voltage
20 VDS = 3.5 V 2.0 V 1.6 V 1.8 V
Drain Current vs. Gate1 to Source Voltage
20 VDS = 3.5 V 2.5 V
Drain Current ID (mA)
12 1.5 V
Drain Current ID (mA)
16
2.0 V
16
12
1.4 V
8
8
1.2 V VG1S = 1.0 V
4 VG2S = 1.0 V 0 1 2 3 4 5
4
0
1
2
3
4
5
Gate1 to Source Voltage VG1S (V)
Gate2 to Source Voltage VG2S (V)
Forward Transfer Admittance vs. Gate1 Voltage
Forward Transfer Admittance |yfS| (mS)
30 VDS = 3.5 V VG2S = 3 V 25
Power Gain vs. Drain Current
18
2.5 V
Power Gain PG (dB)
24
20
15
12
2V 1.5 V 1V
10 VDS = 3.5 V VG2S = 3 V f = 900 MHz 5 10 15 20 25
6
5
0
0.4
0.8
1.2
1.6
2.0
0
Gate1 to Source Voltage VG1S (V)
Drain Current ID (mA)
Rev.2.00 Aug 10, 2005 page 3 of 7
3SK318
Noise Figure vs. Drain Current
5 VDS = 3.5 V VG2S = 3 V f = 900 MHz
Power Gain vs. Drain to Source Voltage
25
Noise Figure NF (dB)
Power Gain PG (dB)
4
20
3
15
2
10 VG2S = 3 V ID = 10 mA f = 900 MHz 2 4 6 8 10
1
5
0
5
10
15
20
25
0
Drain Current ID (mA)
Drain to Source Voltage VDS (V)
Noise Figure vs. Drain to Source Voltage
5 VG2S = 3 V ID = 10 mA f = 900 MHz
Power Gain vs. Gate2 to Source Voltage
25 VDS = 3.5 V f = 900MHz
Noise Figure NF (dB)
4
20
Power Gain PG (dB)
3
15
2
10
1
5
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate2 to Source Voltage VG2S (V)
Noise Figure vs. Gate2 to Source Voltage
5 VDS = 3.5 V f = 900MHz
Noise Figure NF (dB)
4
3
2
1
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Rev.2.00 Aug 10, 2005 page 4 of 7
3SK318
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 120
S21 Parameter vs. Frequency
90
Scale: 1 / div.
60
-150
-30
Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step)
Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.002 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1
-5 -4 -3
Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step)
Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
3SK318
S Parameter
(VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50)
Freq. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 1.000 0.998 0.997 0.994 0.994 0.986 0.978 0.972 0.969 0.954 0.955 0.941 0.932 0.924 0.919 0.905 0.896 0.884 0.880 0.866 ANG. -2.8 -5.8 -9.1 -12.2 -15.1 -18.5 -21.3 -24.1 -27.0 -29.7 -32.8 -35.7 -38.3 -41.3 -44.1 -46.9 -49.2 -52.4 -54.7 -57.7 MAG. 2.41 2.41 2.39 2.38 2.37 2.35 2.30 2.28 2.26 2.23 2.19 2.17 2.14 2.09 2.07 2.03 2.00 1.96 1.93 1.89 S21 ANG. 176.3 171.9 167.6 163.7 159.8 155.5 151.4 147.6 143.6 140.0 135.9 132.2 128.6 125.0 121.5 117.9 114.7 110.4 107.1 103.8 MAG. 0.00068 0.00176 0.00223 0.00303 0.00365 0.00414 0.00484 0.00533 0.00588 0.00617 0.00666 0.00672 0.00694 0.00709 0.00689 0.00699 0.00644 0.00633 0.00585 0.00605 S12 ANG. 89.1 88.5 80.7 76.6 79.1 75.4 75.0 78.0 71.6 69.5 71.5 70.6 69.0 71.4 69.0 68.9 74.2 75.5 77.8 82.1 MAG. 0.999 0.996 0.996 0.994 0.991 0.988 0.983 0.980 0.976 0.971 0.966 0.960 0.955 0.948 0.942 0.937 0.930 0.923 0.917 0.910 S22 ANG. -2.2 -4.5 -6.7 -8.7 -11.0 -13.2 -15.3 -17.4 -19.6 -21.7 -23.7 -25.6 -27.8 -29.9 -31.8 -33.8 -35.8 -37.6 -39.8 -41.9
Rev.2.00 Aug 10, 2005 page 6 of 7
3SK318
Package Dimensions
JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g
D e2 b1 B B e
A Q c
E
HE LP L
Reference Symbol Dimension in Millimeters
A xM
A S A b
L1
A3 e2 e
A2
A
l1
yS b b2 c c1 c A-A Section
A1 S b1 b3 c1 l1
b5
e1
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35
Nom
0.1 1.8 1.15
1.8 0.3 0.1 0.2
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
b4 B-B Section Pattern of terminal position areas
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part Name 3SK318YB-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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